The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy

doi:10.1016/j.nimb.2009.05.004

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	The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy
	Zhou, L. H.2; Zhang, H. H.2; Zhang, L. Q.2; Wang, D. N.1; Zhong, Y. R.1; Zhang, C. H.2; Li, B. S.2; Yang, Y. T.2
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2009-07-01
卷号	267 期号:14 页码:2395-2398
关键词	Silicon Ion implantation Vacancy-type defects Doppler broadening Annealing
ISSN号	0168-583X
DOI	10.1016/j.nimb.2009.05.004
英文摘要	The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The S-parameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases with annealing temperature from 673 to 1373 K. At low annealing temperatures ranging from room temperature to 673 K, argon-decorated vacancies are formed by argon atoms combining with open-volume defects at inactive positron sites. With further increase of annealing temperature, argon-decorated vacancies dissociate and subsequently migrate and coalesce, leading to an increase of S-parameter. Furthermore, the buried vacancy-layer becomes narrow with increasing annealing temperature. At 1373 K, the buried vacancy-layer moved towards the sample surface. (C) 2009 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[10575124] ; Key Laboratory of Beam Technology and Material Modification of Ministry of Education Opening Foundation, Beijing Normal University, China
WOS关键词	SINGLE-CRYSTAL SILICON ; SI ; HELIUM ; HYDROGEN ; CLUSTERS ; CAVITIES ; KINETICS ; DAMAGE ; BEAM
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000268268000012
资助机构	National Natural Science Foundation of China ; Key Laboratory of Beam Technology and Material Modification of Ministry of Education Opening Foundation, Beijing Normal University, China
公开日期	2009-11-20
内容类型	期刊论文
源URL	[http://ir.imp.cas.cn/handle/113462/122]
专题	近代物理研究所_近代物理研究所知识存储（2010之前）
通讯作者	Li, B. S.
作者单位	1.Acad Sinica, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100039, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Zhou, L. H.,Zhang, H. H.,Zhang, L. Q.,et al. The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2009,267(14):2395-2398.
APA	Zhou, L. H..,Zhang, H. H..,Zhang, L. Q..,Wang, D. N..,Zhong, Y. R..,...&Yang, Y. T..(2009).The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,267(14),2395-2398.
MLA	Zhou, L. H.,et al."The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 267.14(2009):2395-2398.