Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1-x)Se-2 solar cells with a single-gradient band gap profile

doi:10.1016/j.rinp.2018.12.043

	Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1-x)Se-2 solar cells with a single-gradient band gap profile
	Li, Hui 3,4; Qu, Fei 3; Luo, Haitian 3; Niu, Xiaona 5; Chen, Jingwei 5; Zhang, Yi 1,6; Yao, Huijun2 ; Jia, Xiaojie 3; Gu, Hongwei 3,4; Wang, Wenjing 3,4
刊名	RESULTS IN PHYSICS
	2019-03-01
卷号	12 页码:704-711
关键词	Cu(InxGa1-x)Se-2 solar cells Ultrathin High interface quality Heavy ion bombardment
ISSN号	2211-3797
DOI	10.1016/j.rinp.2018.12.043
通讯作者	Li, Hui(lihui@mail.iee.ac.cn) ; Gu, Hongwei(guhw@mail.iee.ac.cn)
英文摘要	Reducing the Cu(InxGa1-x)Se-2 (CIGS) thickness is an effective way to reduce the material use and increase manufacturing throughput. However, it is still a challenge to obtain high efficiency in the ultrathin CIGS solar cell. Here, the CIGS solar cell with a 1.3 mu m-thickness-CIGS was synthesized via a three-stage co-evaporation method. The obtained CIGS solar cells were characterized by capacitance-voltage, capacitance-frequency, secondary ion mass spectrometry, X-ray fluorescence, transmission electron microscope, and electron beam induced current techniques. By optimizing the grain size, interface quality, and the Ga gradient in the ultrathin CIGS solar cell, the highest efficiency reached to 11.72% without any light trapping and anti-reflecting coating techniques. Compared with the typical CIGS solar cell with a thickness of 2.3 mu m, the ultrathin CIGS solar cell showed a higher open-circuit voltage due to formation a back electrical field. The grain boundaries were found to be beneficial to the carrier's separation and transport. The ultrathin CIGS solar cell had good ability to resist ion bombardment, suggesting its potential application in the space devices. Our results provide a strategy to achieve high-efficiency ultrathin CIGS solar cells.
资助项目	National Natural Science Foundation of China[51472239] ; National Natural Science Foundation of China[51572132] ; National Natural Science Foundation of China[11575261] ; National Natural Science Foundation of China[11775279] ; National Natural Science Foundation of China[JPPT-2017-99] ; National Natural Science Foundation of China[JPPT-2017-101]
WOS关键词	CU(IN,GA)SE-2 THIN-FILMS ; THICKNESS
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000460704700096
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/134682]
专题	中国科学院近代物理研究所
通讯作者	Li, Hui; Gu, Hongwei
作者单位	1.Nankai Univ, Tianjin Key Lab Photoelect Thin Film Devices & Te, Tianjin 300071, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.Hebei Univ, Inst Photovolta, Coll Phys Sci & Technol, Baoding 071002, Peoples R China 6.Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China
推荐引用方式 GB/T 7714	Li, Hui,Qu, Fei,Luo, Haitian,et al. Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1-x)Se-2 solar cells with a single-gradient band gap profile[J]. RESULTS IN PHYSICS,2019,12:704-711.
APA	Li, Hui.,Qu, Fei.,Luo, Haitian.,Niu, Xiaona.,Chen, Jingwei.,...&Wang, Wenjing.(2019).Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1-x)Se-2 solar cells with a single-gradient band gap profile.RESULTS IN PHYSICS,12,704-711.
MLA	Li, Hui,et al."Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1-x)Se-2 solar cells with a single-gradient band gap profile".RESULTS IN PHYSICS 12(2019):704-711.