Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs

doi:10.3390/electronics8030323

	Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs
	Ke, Lingyun 1,3; Zhao, Peixiong1,3 ; Liu, Jie3 ; Fan, Xue 2; Cai, Chang 1,3; He, Ze 1,3; Li, Dongqing 1,3; Liu, Tianqi 1,3
刊名	ELECTRONICS
	2019-03-14
卷号	8 期号:3 页码:13
关键词	FPGA radiation hardening single event upsets heavy ions error rates
ISSN号	2079-9292
DOI	10.3390/electronics8030323
通讯作者	Fan, Xue(x_fan@foxmail.com) ; Liu, Tianqi(liutianqi@impcas.ac.cn)
英文摘要	The 65 nm Static Random Access Memory (SRAM) based Field Programmable Gate Array (FPGA) was designed and manufactured, which employed tradeoff radiation hardening techniques in Configuration RAMs (CRAMs), Embedded RAMs (EBRAMs) and flip-flops. This radiation hardened circuits include large-spacing interlock CRAM cells, area saving debugging logics, the redundant flip-flops cells, and error mitigated 6-T EBRAMs. Heavy ion irradiation test result indicates that the hardened CRAMs had a high linear energy transfer threshold of upset similar to 18 MeV/(mg/cm2) with an extremely low saturation cross-section of 6.5 x 10-13 cm2/bit, and 71% of the upsets were single-bit upsets. The combinational use of triple modular redundancy and check code could decline similar to 86.5% upset errors. Creme tools were used to predict the CRAM upset rate, which was merely 8.46 x 10-15/bit/day for the worst radiation environment. The effectiveness of radiation tolerance has been verified by the irradiation and prediction results.
资助项目	National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[11675233]
WOS关键词	MITIGATION
WOS研究方向	Engineering
语种	英语
出版者	MDPI
WOS记录号	WOS:000464263600003
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/134000]
专题	中国科学院近代物理研究所
通讯作者	Fan, Xue; Liu, Tianqi
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chengdu Technol Univ, Chengdu 611730, Sichuan, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Ke, Lingyun,Zhao, Peixiong,Liu, Jie,et al. Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs[J]. ELECTRONICS,2019,8(3):13.
APA	Ke, Lingyun.,Zhao, Peixiong.,Liu, Jie.,Fan, Xue.,Cai, Chang.,...&Liu, Tianqi.(2019).Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs.ELECTRONICS,8(3),13.
MLA	Ke, Lingyun,et al."Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs".ELECTRONICS 8.3(2019):13.