Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe-20(+) ions at room temperature

doi:10.1016/j.apsusc.2019.04.213

	Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe-20(+) ions at room temperature
	Li, Bingsheng1,2 ; Liu, Huiping2 ; Lu, Xirui 3; Kang, Long 2; Sheng, Yanbin2 ; Xiong, Anli 3
刊名	APPLIED SURFACE SCIENCE
	2019-08-30
卷号	486 页码:15-21
关键词	GaN Xe irradiation Transmission electron microscopy Stacking faults Dislocation loops
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2019.04.213
通讯作者	Li, Bingsheng(libingshengmvp@163.com)
英文摘要	The general features in ion-irradiated GaN are identified as basal stacking faults and dislocation loops. Understanding the atomic configuration of those lattice defects are important to reduce implantation damage during ion doping in GaN devices. In this study, however, due to the poor understanding of the basic mechanisms involved in such a process, Wurtzite GaN film bombarded with 5 MeV Xe ions was studied by using Transmission electron microscopy (TEM) and high resolution TEM (HRTEM). Analyzing the microstructure by TEM, we show the formation of a high density of basal stacking faults, pyramidal dislocation loops and point defect clusters. These defects were carefully investigated by high resolution TEM (HRTEM), we notice the growth of basal stacking faults accompanied with the formation of pyramidal and prism dislocation loops. The most of observed stacking faults and dislocation loops are identified as gallium interstitials. This work is expected to provide insights into the understanding mechanisms controlling the irradiation damage of GaN exposed to ion irradiation and will benefit the fabrication of GaN devices.
资助项目	National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[U1832133] ; Doctor Research Foundation of Southwest University of Science and Technology[18zx7141]
WOS关键词	HYDROGEN IMPLANTATION ; DEFECTS ; MICROSTRUCTURE
WOS研究方向	Chemistry ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000471748100002
资助机构	National Natural Science Foundation of China ; Doctor Research Foundation of Southwest University of Science and Technology
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/133158]
专题	中国科学院近代物理研究所
通讯作者	Li, Bingsheng
作者单位	1.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Southwest Univ Sci & Technol, Sch Natl Def Sci & Technol, Mianyang 621010, Sichuan, Peoples R China
推荐引用方式 GB/T 7714	Li, Bingsheng,Liu, Huiping,Lu, Xirui,et al. Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe-20(+) ions at room temperature[J]. APPLIED SURFACE SCIENCE,2019,486:15-21.
APA	Li, Bingsheng,Liu, Huiping,Lu, Xirui,Kang, Long,Sheng, Yanbin,&Xiong, Anli.(2019).Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe-20(+) ions at room temperature.APPLIED SURFACE SCIENCE,486,15-21.
MLA	Li, Bingsheng,et al."Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe-20(+) ions at room temperature".APPLIED SURFACE SCIENCE 486(2019):15-21.