Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 degrees C

doi:10.1016/j.apsusc.2018.05.228

	Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 degrees C
	Han, W. T.1; Liu, H. P.2; Li, B. S.2
刊名	APPLIED SURFACE SCIENCE
	2018-10-15
卷号	455 页码:433-437
关键词	He implantation Si Transmission electron microscopy Cavities Frank loops
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2018.05.228
英文摘要	The implantation-induced defects of crystalline silicon implanted with helium ions to a dose of 5 x 10(16)/cm(2) at 600 degrees C were investigated. The sample was analyzed by transmission electron microscopy and high-resolution electron microscopy. Faceted cavities are observed in the damaged layer. Concurrently the distribution of interstitial-type defect clusters was investigated by conventional electron microscopy in bright and dark field. Many rod-like defects, which belong to {1 1 3}, {1 1 1} and (- 2 0 0), are formed in the end of the projected range. In front of the damaged layer, some ribbon-like defects are formed, which belong to <2 0 0>, ,<1 -1 1> and <1 3 - 3>. The possible reasons of the observed defect clusters are discussed.
资助项目	National Nature Science Foundation of China[11475229]
WOS关键词	TRANSIENT ENHANCED DIFFUSION ; HE IMPLANTATION ; HIGH FLUENCE ; SILICON ; TEMPERATURE ; CAVITIES ; DAMAGE ; VOIDS ; STABILITY ; EVOLUTION
WOS研究方向	Chemistry ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000438578700052
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/59682]
专题	中国科学院近代物理研究所
通讯作者	Li, B. S.
作者单位	1.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Han, W. T.,Liu, H. P.,Li, B. S.. Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 degrees C[J]. APPLIED SURFACE SCIENCE,2018,455:433-437.
APA	Han, W. T.,Liu, H. P.,&Li, B. S..(2018).Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 degrees C.APPLIED SURFACE SCIENCE,455,433-437.
MLA	Han, W. T.,et al."Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 degrees C".APPLIED SURFACE SCIENCE 455(2018):433-437.