Influence of heavy ion flux on single event effect testing in memory devices

doi:10.1016/j.nimb.2017.04.038

	Influence of heavy ion flux on single event effect testing in memory devices
	Xi, Kai 1; Luo, Jie1,2,3 ; Liu, Jie1 ; Sun, Youmei1 ; Hou, Mingdong 1; Liu, Tianqi 1; Wang, Bin 1; Ye, Bing 1
	2017-09
关键词	Swift heavy ions Ion flux Single event effect Memory device
卷号	406
DOI	10.1016/j.nimb.2017.04.038
页码	431-436
英文摘要	The natural space presents a particle flux variable environment and choosing a suitable flux value for ground-based single event experiments is an unresolved problem so far. In this work, various types of memory devices have been tested over the ion flux range from 10 to 10(5) ions/(cm(2).s) using different ions covering LET from 10.1 to 99.8 MeV.cm(2)/mg. It was found that for most devices the error rates of single event upsets are affected by the applied flux value. And the effect involving flux becomes prominent as it is increased above 10(3) ions/(cm(2).s). Different devices behave differently as the flux is increased and the flux effect depends strongly on the LET of the impinging ions. The results concluded in this experiment are discussed in detail and recommendations for choosing appropriate experimental flux are given. (C) 2017 Elsevier B.V. All rights reserved.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000407659500007
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/58495]
专题	中国科学院近代物理研究所
通讯作者	Liu, Jie
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Xi, Kai,Luo, Jie,Liu, Jie,et al. Influence of heavy ion flux on single event effect testing in memory devices[C]. 见:.