A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM

doi:10.1016/j.nimb.2017.01.034

	A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM
	Yan, Weiwei 1; Wang, Bin 2,3; Zeng, Chuanbin 1; Geng, Chao 4; Liu, Tianqi 2; Khan, Maaz 2; Hou, Mingdong 2; Ye, Bing 2,3; Sun, Youmei2 ; Yin, Yanan 2,3
	2017-09
关键词	Heavy ion irradiation Single event upset Active delay element SRAM cell Radiation hardened Silicon-on-insulator
卷号	406
DOI	10.1016/j.nimb.2017.01.034
页码	437-442
英文摘要	Single event upset (SEU) susceptibility of unhardened 6T/SRAM and hardened active delay element (ADE)/SRAM, fabricated with 0.35 mu m silicon-on-insulator (SOI) CMOS technology, was investigated at heavy ion accelerator. The mechanisms were revealed by the laser irradiation and resistor-capacitor hardened techniques. Compared with conventional 6T/SRAM, the hardened ADE/SRAM exhibited higher tolerance to heavy ion irradiation, with an increase of about 80% in the LET threshold and a decrease of similar to 64% in the limiting upset cross-section. Moreover, different probabilities between 0 -> 1 and 1 -> 0 transitions were observed, which were attributed to the specific architecture of ADE/SRAM memory cell. Consequently, the radiation-hardened technology can be an attractive alternative to the SEU tolerance of the device-level. (C) 2017 Elsevier B.V. All rights reserved.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
资助项目	National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11375241] ; National Natural Science Foundation of China[11275237]
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000407659500008
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/58417]
专题	中国科学院近代物理研究所
通讯作者	Liu, Jie
作者单位	1.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Shenzhen State Microelect Co Ltd, Shenzhen 518057, Peoples R China
推荐引用方式 GB/T 7714	Yan, Weiwei,Wang, Bin,Zeng, Chuanbin,et al. A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM[C]. 见:.