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Blue-violet PL band formation in C : SiO2 films after swift heavy ion irradiation
Wang, ZG; Jin, YF; Xie, EQ; Liu, J; Zhu, ZY; Sun, YM; Hou, MD; Zhang, QX; Chen, XX
2003-08
关键词swift heavy ions electronic energy loss photoluminescence C-doped SiO2 films light-emitting materials
卷号209
DOI10.1016/S0168-583X(02)02029-3
页码200-204
英文摘要One hundred and twenty keV Gion doped SiO2 films were irradiated at RT with swift Ar, Kr, Xe or U ions and their photoluminescence (PL) properties were examined. From the obtained results, we found that an intense blue-violet PL band centred at similar to435 +/- 10 nm was formed in all ion irradiated samples and a weak ultraviolet PL band centred at similar to380 nm was formed only in the samples after Kr, Xe or U ion irradiations. The PL peak intensity of the blue-violet band (i) increases with the increase of the swift heavy ion irradiation fluence, (ii) decreases with the increase of electronic energy loss S-e when S-e < 4.85 keV/nm but increases for S-e > 4.85 keV/nm. Furthermore, the peak central position of the blue-violet PL is shifted slightly to violet with increasing S, and some substructures appeared in the PL spectra of the samples irradiated with Xe or U ions. The appearance of these substructures is due to the high electronic energy loss. For the violet PL band, the intensity increases with S-c. Possible origins and formation mechanism of light-emitters corresponding to the observed PL bands are discussed. (C) 2002 Elsevier B.V. All rights reserved.
会议录NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者ELSEVIER SCIENCE BV
会议录出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种英语
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号WOS:000184884700034
内容类型会议论文
源URL[http://119.78.100.186/handle/113462/58130]  
专题中国科学院近代物理研究所
通讯作者Wang, ZG
作者单位Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Wang, ZG,Jin, YF,Xie, EQ,et al. Blue-violet PL band formation in C : SiO2 films after swift heavy ion irradiation[C]. 见:.
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