Defects in SiO2 glass irradiated with high energy Ar ions

	Defects in SiO2 glass irradiated with high energy Ar ions
	Zhu, ZY; Jin, YF; Li, CL; Sun, YM; Zhang, CH; Meng, GH
	1998-12
关键词	irradiation defect SiO2 glass
卷号	146
期号	1-4
页码	455-461
英文摘要	SiO2 glass specimens are irradiated at room temperature with 560 MeV and 1.15 GeV Ar ions. Defect production is investigated by positron lifetime spectra, EPR and UV absorption measurements. Free volumes of about 0.065 nm(3) in size are found to be present in the virgin specimen from the corresponding Ortho-Positronium lifetimes. With increasing dose the intensity of the component corresponding to positronium decreases sharply. This is attributed to the preferred annihilation of positrons with the radiation-ionized-electrons wandering in free volumes of the material. Optical absorption bands are induced at about 5.8, 5 and 4.5 eV by the irradiations and the absorption coefficients increase gradually with increasing dose. The EPR spectra of the irradiated specimens show the occurrence of the E' center, the number density of which reveals two distinct regimes according to its dependence on dose. In the low dose range the number density of E' center follows a 0.23 power law dose dependence whereas at high dose it increases linearly with dose. Furthermore the EPR spectra show fine structure which changes with dose. (C) 1998 Elsevier Science B.V. All rights reserved.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000077719400069
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/58126]
专题	中国科学院近代物理研究所
通讯作者	Zhu, ZY
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Zhu, ZY,Jin, YF,Li, CL,et al. Defects in SiO2 glass irradiated with high energy Ar ions[C]. 见:.