Temperature annealing of tracks induced by ion irradiation of graphite

doi:10.1016/j.nimb.2005.11.162

	Temperature annealing of tracks induced by ion irradiation of graphite
	Liu, J ; Yao, HJ ; Sun, YM ; Duan, JL ; Hou, MD ; Mo, D ; Wang, ZG ; Jin, YF ; Abe, H ; Li, ZC
	2006-04
关键词	graphite heavy ions scanning tunneling microscopy Raman spectroscopy
卷号	245
期号	1
DOI	10.1016/j.nimb.2005.11.162
页码	126-129
英文摘要	Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing. (c) 2006 Published by Elsevier B.V.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000236288500026
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/57723]
专题	中国科学院近代物理研究所
通讯作者	Liu, J
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Tokyo, Dept Quantum Engn & Syst Sci, Tokyo, Japan
推荐引用方式 GB/T 7714	Liu, J,Yao, HJ,Sun, YM,et al. Temperature annealing of tracks induced by ion irradiation of graphite[C]. 见:.