Experimental studies of single-event effects induced by heavy ions

	Experimental studies of single-event effects induced by heavy ions
	Liu, J ; Hou, MD ; Li, BQ ; Liu, CL ; Wang, ZG ; Cheng, S ; Sun, YM ; Jin, YF ; Lin, YL ; Cai, JR
	2000-04
关键词	single-event effect heavy ion simulation microcircuit
卷号	164
页码	973-978
英文摘要	This paper presents the results of ground-based heavy ion test of single-event effect (SEE) vulnerability on microcircuits used in space. We observed the dependence of upset cross-sections on the incident angle of ions in Intel 8086 CPU. SEU cross-sections of various SRAMs did not depend on the stored pattern, but 0 --> 1 and 1 --> 0 transitions were completely different for different manufacturer products. Some SEE protection methods were verified in conditions of ground simulation experiments. (C) 2000 Elsevier Science B.V. All rights reserved.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000087022500127
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/57722]
专题	中国科学院近代物理研究所
通讯作者	Liu, J
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Ctr Space Sci & Appl Res, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Liu, J,Hou, MD,Li, BQ,et al. Experimental studies of single-event effects induced by heavy ions[C]. 见:.