. Structural and Optical Properties of 6H-SiC Helium and Oxygen Implanted at 700 K

doi:10.4028/www.scientific.net/AMR.177.287

	. Structural and Optical Properties of 6H-SiC Helium and Oxygen Implanted at 700 K
	Zhang, H. H.1,2; Gao, W. M.1; Shen, Y. L.1; Li, B. S.2; Bao, Y ; Tian, L ; Gong, JH
	2011
关键词	6H-SiC Raman UV RBS-C
卷号	177
DOI	10.4028/www.scientific.net/AMR.177.287
页码	287-+
英文摘要	Raman scattering spectroscopy, ultraviolet and visible absorption spectroscopy and Rutherford backscattering spectrometry were employed to analyze the annealing behavior of defects and the optimistic effect of cavities to oxygen. It was found that the cavities had strong getting effect to oxygen and captured its neighboring implanted oxygen atom, and enhanced the formation of SixOy compound, thus helped shaping the buried oxide in a well defined region. In addition, it also minished the damage level in lattice. The interface between damage layer and crystalline layer was estimated to be 198 mu below surface of 6H-SiC. The implanted oxygen was pegged in the compressed and serried cavity layer, making the amorphous layer narrower than that of reference samples.
会议录	TESTING AND EVALUATION OF INORGANIC MATERIALS I
会议录出版者	TRANS TECH PUBLICATIONS LTD
会议录出版地	KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, SWITZERLAND
语种	英语
资助项目	Natural Science Foundation of Jiangxi Province[2009GZC0031]
WOS研究方向	Materials Science
WOS记录号	WOS:000290469000075
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/57328]
专题	中国科学院近代物理研究所
通讯作者	Zhang, H. H.
作者单位	1.Jiangxi Sci & Technol Normal Univ, Jiangxi Key Lab Surface & Engn, Nanchang 330013, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Zhang, H. H.,Gao, W. M.,Shen, Y. L.,et al. . Structural and Optical Properties of 6H-SiC Helium and Oxygen Implanted at 700 K[C]. 见:.