Magnetism of hydrogen-irradiated silicon carbide

doi:10.1016/j.physleta.2014.05.001

	Magnetism of hydrogen-irradiated silicon carbide
	Cheng, Wei 1,2; Ying, Min-Ju 1; Zhang, Feng-Shou 1,3,4; Zhou, Hong-Yu 1
刊名	PHYSICS LETTERS A
	2014-05-16
卷号	378 页码:1897-1902
关键词	SiC Ab initio calculation Defects Magnetism
ISSN号	0375-9601
DOI	10.1016/j.physleta.2014.05.001
英文摘要	Spin-polarized density functional theory is used to study two-hydrogen defect complexes in silicon carbide. We find that the magnetism depends on the distances of the two hydrogen atoms. Magnetism appears when the two hydrogen defects are distant from each other, and magnetism cancels out if they are close to each other. The critical distance between the two hydrogen defects is determined. (C) 2014 Elsevier B.V. All rights reserved.
资助项目	[NSFC-10634070]
WOS关键词	INITIO MOLECULAR-DYNAMICS ; TOTAL-ENERGY CALCULATIONS ; WAVE BASIS-SET ; 1ST-PRINCIPLES CALCULATIONS ; NANOTUBES ; IMPURITIES ; TRANSITION ; DEFECTS ; METALS
WOS研究方向	Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000337884200024
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/57084]
专题	中国科学院近代物理研究所
通讯作者	Zhang, Feng-Shou
作者单位	1.Beijing Normal Univ, Coll Nucl Sci & Technol, Key Lab Beam Technol & Mat Modificat, Minist Educ, Beijing 100875, Peoples R China 2.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China 3.Beijing Radiat Ctr, Beijing 100875, Peoples R China 4.Natl Lab Heavy Ion Accelerator Lanzhou, Ctr Theoret Nucl Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Cheng, Wei,Ying, Min-Ju,Zhang, Feng-Shou,et al. Magnetism of hydrogen-irradiated silicon carbide[J]. PHYSICS LETTERS A,2014,378:1897-1902.
APA	Cheng, Wei,Ying, Min-Ju,Zhang, Feng-Shou,&Zhou, Hong-Yu.(2014).Magnetism of hydrogen-irradiated silicon carbide.PHYSICS LETTERS A,378,1897-1902.
MLA	Cheng, Wei,et al."Magnetism of hydrogen-irradiated silicon carbide".PHYSICS LETTERS A 378(2014):1897-1902.