Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes

doi:10.1103/PhysRevAccelBeams.19.103402

	Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes
	Liu, Wei 1,2,3; Zhang, Shukui 3; Stutzman, Marcy 3; Poelker, Matt 3
刊名	PHYSICAL REVIEW ACCELERATORS AND BEAMS
	2016-10-24
卷号	19 页码:8
ISSN号	2469-9888
DOI	10.1103/PhysRevAccelBeams.19.103402
英文摘要	Bulk GaAs samples with different surface cleave planes were implanted with 100 and 10000 V hydrogen ions inside an ultrahigh vacuum test apparatus to simulate ion back-bombardment of the photocathode inside a DC high voltage photogun. The photocathode yield, or quantum efficiency, could easily be recovered following implantation with 100 V hydrogen ions but not for 10000 V ions. Moreover, the implantation damage with 10000 V hydrogen ions was more pronounced for GaAs photocathode samples with (100) and (111A) cleave planes, compared to the photocathode with (110) cleave plane. This result is consistent with enhanced ion channeling for the (110) cleave plane compared to the other cleave planes, with ions penetrating deeper into the photocathode material beyond the absorption depth of the laser light and beyond the region of the photocathode where the photoemitted electrons originate.
资助项目	U.S. DOE[DE-AC05-06OR23177]
WOS关键词	ATOMIC-HYDROGEN ; PHOTOEMISSION ; CS
WOS研究方向	Physics
语种	英语
出版者	AMER PHYSICAL SOC
WOS记录号	WOS:000410539500002
资助机构	U.S. DOE
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/45611]
专题	中国科学院近代物理研究所
通讯作者	Liu, Wei
作者单位	1.Chinese Acad Sci, Inst Modern Phys, 509 Nanchang Rd, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, 19 A Yuquan Rd, Beijing 100049, Peoples R China 3.Thomas Jefferson Natl Accelerator Facil, 12000 Jefferson Ave, Newport News, VA 23606 USA
推荐引用方式 GB/T 7714	Liu, Wei,Zhang, Shukui,Stutzman, Marcy,et al. Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes[J]. PHYSICAL REVIEW ACCELERATORS AND BEAMS,2016,19:8.
APA	Liu, Wei,Zhang, Shukui,Stutzman, Marcy,&Poelker, Matt.(2016).Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes.PHYSICAL REVIEW ACCELERATORS AND BEAMS,19,8.
MLA	Liu, Wei,et al."Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes".PHYSICAL REVIEW ACCELERATORS AND BEAMS 19(2016):8.