Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model

doi:10.1088/1674-1056/24/12/128706

	Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model
	Rong Xi-Ming 1; Chen Jun 2,3; Li Jing-Tian 2,3; Zhuang Jun 1; Ning Xi-Jing 2,3
刊名	CHINESE PHYSICS B
	2015-12-01
卷号	24 页码:4
关键词	condensing potential model Ni-Al alloy crystallization ability pulsed laser deposition
ISSN号	1674-1056
DOI	10.1088/1674-1056/24/12/128706
英文摘要	Recently, a condensing potential model was developed to evaluate the crystallization ability of bulk materials [Ye X X, Ming C, Hu Y C and Ning X J 2009 J. Chem. Phys. 130 164711 and Peng K, Ming C, Ye X X, Zhang W X, Zhuang J and Ning X J 2011 Chem. Phys. Lett. 501 330], showing that the best temperature for single crystal growth is about 0.6T(m), where T-m is the melting temperature, and for Ni-Al alloy, more than 6 wt% of Al-doping will badly reduce the crystallization ability. In order to verify these predictions, we fabricated Ni-Al films with different concentrations of Al on Si substrates at room temperature by pulsed laser deposition, and post-annealed the films at 833, 933, 1033 ( similar to 0.6Tm), 1133, and 1233 K in vacuum furnace, respectively. The x-ray diffraction spectra show that annealing at 0.6T(m) is indeed best for larger crystal grain formation, and the film crystallization ability remarkably declines with more than 6-wt% Al doping.
资助项目	Specialized Research Fund for the Doctoral Program of Higher Education, China[20130071110018] ; National Natural Science Foundation of China[11274073]
WOS关键词	NI3AL THIN COATINGS ; SUPERCONDUCTING FILMS ; MOLECULAR-DYNAMICS ; NI/AL2O3 CATALYST ; MATERIALS SCIENCE ; SINGLE-CRYSTALS ; DIAMOND ; CRYSTALLIZATION ; SOLIDIFICATION ; FABRICATION
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000366977800087
资助机构	Specialized Research Fund for the Doctoral Program of Higher Education, China ; National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/41304]
专题	中国科学院近代物理研究所
通讯作者	Ning Xi-Jing
作者单位	1.Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China 2.Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China 3.Fudan Univ, Key Lab, Appl Ion Beam Phys Lab, Minist Educ, Shanghai 200433, Peoples R China
推荐引用方式 GB/T 7714	Rong Xi-Ming,Chen Jun,Li Jing-Tian,et al. Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model[J]. CHINESE PHYSICS B,2015,24:4.
APA	Rong Xi-Ming,Chen Jun,Li Jing-Tian,Zhuang Jun,&Ning Xi-Jing.(2015).Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model.CHINESE PHYSICS B,24,4.
MLA	Rong Xi-Ming,et al."Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model".CHINESE PHYSICS B 24(2015):4.