Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping

doi:10.1116/1.2186653

	Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping
	Lu, YF ; Sun, J ; Yu, D ; Shi, LQ ; Dong, ZB ; Wu, JD
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
	2006-05-01
卷号	24 页码:413-417
ISSN号	0734-2101
DOI	10.1116/1.2186653
英文摘要	We developed a method for compound host film synthesis and in situ doping based on plasma assisted pulsed laser deposition by coablation of two targets with two pulsed laser beams. The feasibility of this method was demonstrated by the preparation of Er-doped GaN films. In the reactive nitrogen environment and with the assistance of nitrogen plasma generated from electron cyclotron resonance microwave discharge, the ablation of a polycrystalline GaAs target resulted in the reactive deposition of a GaN host film, whereas the ablation of a metallic Er target provided the host with Er atoms for in situ doping in the growing GaN host film. Hexagonal GaN films were formed on a silicon substrate as the host and Er was incorporated into the host with controlled concentration. We found that the composition of the compound host could be adjusted by varying the laser fluence on the target for host deposition or the energy of the plasma stream bombarding the growing host film. The dopant concentration could also be independently controlled to vary in a wide range by changing the pulse repetition ratio of the two laser beams or the laser fluence on the target for dopant supply. It was also proved that doping of very low concentrations could be easily realized by simply adjusting the pulse repetition rate and the fluence of the second laser. (c) 2006 American Vacuum Society.
WOS关键词	NITRIDE THIN-FILMS ; GALLIUM NITRIDE ; BEAM EPITAXY ; GAAS TARGET ; DOPED GAN ; GROWTH ; PHOTOLUMINESCENCE ; SPECTROSCOPY ; EVAPORATION ; EMISSION
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	A V S AMER INST PHYSICS
WOS记录号	WOS:000238091300005
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/26651]
专题	中国科学院近代物理研究所
通讯作者	Wu, JD
作者单位	1.Fudan Univ, Dept Opt Sci & Engn, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China 2.Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China
推荐引用方式 GB/T 7714	Lu, YF,Sun, J,Yu, D,et al. Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2006,24:413-417.
APA	Lu, YF,Sun, J,Yu, D,Shi, LQ,Dong, ZB,&Wu, JD.(2006).Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,24,413-417.
MLA	Lu, YF,et al."Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 24(2006):413-417.