The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance

	The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance
	Xuan, K ; Yan, XH ; Ding, SL ; Yang, YR ; Xiao, Y ; Guo, ZH
刊名	CHINESE PHYSICS
	2006-02-01
卷号	15 页码:460-465
关键词	field emission interface junction p-n junction ohmic contact
ISSN号	1009-1963
英文摘要	ZnO micro-prisms are prepared on the p-type and n-type Si substrates, separately. The I-V curves analysed by AFM show that the interface junctions between the ZnO micro-prisms and the p-type substrate and between the ZnO micro-prisms and the n-type Si substrate exhibit p-n junction behaviour and ohmic contact behaviour, respectively. The formation of the p-n heterojunction and ohmic contact is ascribed to the intrinsic n-type conduction of ZnO material. Better field emission performance (lower onset voltage and larger emission current) is observed from an individual ZnO micro-prism grown on the n-type Si substrate. It is suggested that the n-Si/n-ZnO interfacial ohmic contact benefits the electron emission; while the p-Si/n-ZnO interface heterojunction deteriorates the electron emission.
WOS关键词	ZINC-OXIDE NANOWIRES ; WALLED CARBON NANOTUBES ; NANOROD ARRAYS
WOS研究方向	Physics
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000235228300038
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/26201]
专题	中国科学院近代物理研究所
通讯作者	Xuan, K
作者单位	1.Xiangtan Univ, Dept Phys, Xiangtan 411105, Peoples R China 2.Xiangtan Univ, Inst Modern Phys, Xiangtan 411105, Peoples R China 3.Nanjing Univ Aeronaut & Astronaut, Coll Sci, Nanjing 210016, Peoples R China
推荐引用方式 GB/T 7714	Xuan, K,Yan, XH,Ding, SL,et al. The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance[J]. CHINESE PHYSICS,2006,15:460-465.
APA	Xuan, K,Yan, XH,Ding, SL,Yang, YR,Xiao, Y,&Guo, ZH.(2006).The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance.CHINESE PHYSICS,15,460-465.
MLA	Xuan, K,et al."The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance".CHINESE PHYSICS 15(2006):460-465.