| A full-range analytical current model for heterojunction TFET with dual material gate | |
| Guan, Yunhe; Li, Zunchao; Zhang, Wenhao; Zhang, Yefei; Liang, Feng | |
| 刊名 | IEEE Transactions on Electron Devices
 |
| 2018 | |
| 卷号 | 65页码:5213-5217 |
| 关键词 | Ambipolar behavior Ambipolar currents Current modeling Drain current models Dual material gate Gaussian quadratures Mobile charge Tunnel field-effect transistors (TFET) |
| ISSN号 | 0018-9383 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2829903 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Guan, Yunhe,Li, Zunchao,Zhang, Wenhao,et al. A full-range analytical current model for heterojunction TFET with dual material gate[J]. IEEE Transactions on Electron Devices,2018,65:5213-5217. |
| APA | Guan, Yunhe,Li, Zunchao,Zhang, Wenhao,Zhang, Yefei,&Liang, Feng.(2018).A full-range analytical current model for heterojunction TFET with dual material gate.IEEE Transactions on Electron Devices,65,5213-5217. |
| MLA | Guan, Yunhe,et al."A full-range analytical current model for heterojunction TFET with dual material gate".IEEE Transactions on Electron Devices 65(2018):5213-5217. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论