| Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions | |
| Zhi-Qiang Fan; Jiezhi Chen; Xiangwei Jiang | |
| 刊名 | Journal of Physics D: Applied Physics
 |
| 2018 | |
| 卷号 | 51期号:33页码:335104 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29201]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhi-Qiang Fan;Jiezhi Chen;Xiangwei Jiang. Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions[J]. Journal of Physics D: Applied Physics,2018,51(33):335104. |
| APA | Zhi-Qiang Fan;Jiezhi Chen;Xiangwei Jiang.(2018).Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions.Journal of Physics D: Applied Physics,51(33),335104. |
| MLA | Zhi-Qiang Fan;Jiezhi Chen;Xiangwei Jiang."Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions".Journal of Physics D: Applied Physics 51.33(2018):335104. |
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