Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate

	Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate
	Wenyuan Yang ; Dong Pan ; Rui Shen ; Xinzhe Wang ; Jianhua Zhao ; Qing Chen
刊名	NANOTECHNOLOGY
	2018
卷号	29 期号:41 页码:415203
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29206]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Wenyuan Yang ; Dong Pan ; Rui Shen ; Xinzhe Wang ; Jianhua Zhao ; Qing Chen. Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate[J]. NANOTECHNOLOGY,2018,29(41):415203.
APA	Wenyuan Yang ; Dong Pan ; Rui Shen ; Xinzhe Wang ; Jianhua Zhao ; Qing Chen.(2018).Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate.NANOTECHNOLOGY,29(41),415203.
MLA	Wenyuan Yang ; Dong Pan ; Rui Shen ; Xinzhe Wang ; Jianhua Zhao ; Qing Chen."Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate".NANOTECHNOLOGY 29.41(2018):415203.