Thermal transport in crystalline Si/Ge nano-composites: Atomistic   simulations and microscopic models

doi:10.1063/1.3688943

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	Thermal transport in crystalline Si/Ge nano-composites: Atomistic simulations and microscopic models
	Hao, Feng ; Fang, Daining ; Xu, Zhiping
刊名	应用物理学快报
	2012
关键词	EFFICIENT THERMOELECTRIC-MATERIAL SILICON NANOWIRES CONDUCTIVITY GE/SI SI PERFORMANCE INTERFACE SINGLE STRAIN LAYERS
DOI	10.1063/1.3688943
英文摘要	Thermal transport in Si/Ge nano-composites, consisting of crystalline silicon as matrix and aligned germanium nanowires as inclusions, is investigated here through non-equilibrium and equilibrium molecular dynamics (MD) simulations. Our results show increasing of temperature gradient at the interface between silicon and germanium, which is limited in an interfacial phase of few lattices. A thermal boundary phase is included explicitly in our three-phase model, in companion with the modified effective medium theory, to be compared with MD simulation results with various nanowire concentrations. The results suggest that the presence of nanowires leads to a dramatic decrease of kappa for heat transfer across nanowires arising from interfacial phase, while along the interfaces, the reduction of phonon mean free path due to interfacial scattering lowers kappa of silicon matrix and germanium nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3688943]; Physics, Applied; SCI(E); EI; 12; ARTICLE; 9; 100
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/234537]
专题	工学院
推荐引用方式 GB/T 7714	Hao, Feng,Fang, Daining,Xu, Zhiping. Thermal transport in crystalline Si/Ge nano-composites: Atomistic simulations and microscopic models[J]. 应用物理学快报,2012.
APA	Hao, Feng,Fang, Daining,&Xu, Zhiping.(2012).Thermal transport in crystalline Si/Ge nano-composites: Atomistic simulations and microscopic models.应用物理学快报.
MLA	Hao, Feng,et al."Thermal transport in crystalline Si/Ge nano-composites: Atomistic simulations and microscopic models".应用物理学快报 (2012).