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	EFFECT OF TIME AND TEMPERATURE ON EPITAXY GROWTH
	Aanand ; Sheu, Gene ; Yang, Shao-Ming ; Lai, Ciou-Jhong ; Imam, Syed Sarwar
	2016
关键词	epitaxy epi-layer vacancy interstitials net doping diffusion
英文摘要	The growth rate of epitaxy depends primarily on parameters such as source gas deposition temperature pressure and concentration. Most microelectronic circuits fabrication that use epitaxial wafers require a lightly epitaxial layer (10(14)-10(17) atom/cm(3)) on a heavily doped substrate (10(19) - 10(21) atom/cm(3)). The distribution of vacancies and interstitials is important for the distribution of the high surface concentration enhancement of tail diffusivity and oxidation enhanced diffusion. We present the auto doping during the epitaxy growth process which is being ignored most of the time during the device fabrication. Also the defects which are formed during the growth of epitaxy. The present simulation solves for the transient interstitials distribution assuming that interstitials are at equilibrium with vacancies.; CPCI-S(ISTP); aanand92@gmail.com; rickyyang121@gmail.com
语种	英语
出处	China Semiconductor Technology International Conference (CSTIC)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450092]
专题	软件与微电子学院
推荐引用方式 GB/T 7714	Aanand,Sheu, Gene,Yang, Shao-Ming,et al. EFFECT OF TIME AND TEMPERATURE ON EPITAXY GROWTH. 2016-01-01.

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