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	Strain effects on monolayer MoS2 field effect transistors
	Zeng, Lang ; Xin, Zheng ; Chang, Pengying ; Liu, Xiaoyan
	2015
关键词	SCATTERING-THEORY NANOSCALE GRAPHENE MOSFET
英文摘要	In this work, the strain effect on monolayer MoS2 field effect transistors is investigated by density functional (DFT) calculation and quantum transport simulation. DFT calculation reveals that the tensile strain decreases the effective mass, while compressive strain increases the effective mass. However, ballistic quantum transport simulation shows that a smaller effective mass does not always result in better performance for a 5nm gate length transistor. This is because for field effect transistors in the ultimate scaling region, the suppression of off-state tunneling current is the greatest concern in device design. The effect of scattering is considered by a simple approach and is shown to have a stronger impact on the intrinsic delay for the 10nm gate length transistor. (C) 2015 The Japan Society of Applied Physics; NKBRP [2011CBA00604]; NSFC [61306104]; China Postdoctoral Science Foundation [2013M540018]; SCI(E); CPCI-S(ISTP); 4,SI; 54
语种	英语
出处	International Conference on Solid State Devices and Materials (SSDM 2014)
DOI标识	10.7567/JJAP.54.04DC17
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/493700]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zeng, Lang,Xin, Zheng,Chang, Pengying,et al. Strain effects on monolayer MoS2 field effect transistors. 2015-01-01.

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