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	New concept of planar germanium MOSFET with stacked germanide layers at source/drain
	Xu, Hao ; Sun, Lei ; Zhang, Yi-Bo ; Han, Jing-Wen ; Wang, Yi ; Zhang, Sheng-Dong
	2015
关键词	HIGH-KAPPA GATE SCHOTTKY SOURCE/DRAIN METAL GATE MOBILITY CONTACTS SI TECHNOLOGY TRANSISTOR SUBSTRATE PMOSFETS
英文摘要	In this paper, we have proposed and simulated one novel Schottky barrier germanium-based MOSFET structure. Herein, the source/drain region of the device is consisted with two stacked layers of germanide materials. Different barrier heights of the top and bottom contact are hence formed with channel respectively. The top barrier height is designed lower enough to enlarge drive current, and the bottom barrier height is higher ( nearly mid-gap) to diminish the leakage current. The working mechanism and the performance of n- and p-type devices is studied. Comparisons between dual barrier structure and single barrier structure are also carried out. The results show that the characteristics have been significantly enhanced with the proposed dual barrier structure. Besides, the devices' performance is nearly insensitive to germanium thickness, which leads to the relax of the requirement of germanium-on-insulator (GeOI) structures for leakage immunization. (C) 2015 The Japan Society of Applied Physics; National Natural Science Foundation of China; SCI(E); CPCI-S(ISTP); 4,SI; 54
语种	英语
出处	International Conference on Solid State Devices and Materials (SSDM 2014)
DOI标识	10.7567/JJAP.54.04DC13
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/493699]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Hao,Sun, Lei,Zhang, Yi-Bo,et al. New concept of planar germanium MOSFET with stacked germanide layers at source/drain. 2015-01-01.

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