Field emission analysis of band bending in donor/acceptor heterojunction

doi:10.1063/1.4955219

CORC > 北京大学 > 信息科学技术学院

	Field emission analysis of band bending in donor/acceptor heterojunction
	Xing, Yingjie ; Li, Shuai ; Wang, Guiwei ; Zhao, Tianjiao ; Zhang, Gengmin
刊名	JOURNAL OF APPLIED PHYSICS
	2016
关键词	ORGANIC SOLAR-CELLS ENERGY-LEVEL ALIGNMENT DEVICE PERFORMANCE INTERFACES
DOI	10.1063/1.4955219
英文摘要	The donor/acceptor heterojunction plays an important role in organic solar cells. An investigation of band bending in the donor/acceptor heterojunction is helpful in analysis of the charge transport behavior and for the improvement of the device performance. In this work, we report an approach for detection of band bending in a donor/acceptor heterojunction that has been prepared on a small and sharp tungsten tip. In situ field emission measurements are performed after the deposition process, and a linear Fowler-Nordheim plot is obtained from the fresh organic film surface. The thickness-dependent work function is then measured in the layer-by-layer deposited heterojunction. Several different types of heterojunction (zinc phthalocyanine (ZnPc)/C60, copper phthalocyanine (CuPc)/3,4,9,10-perylenetetracarboxylic bisbenzimidazole, and CuPc/C60) are fabricated and analyzed. The different charge transfer directions in the heterojunctions are distinguished by field emission measurements. The calculation method used to determine the band bending is then discussed in detail. A triple layer heterojunction (C60/ZnPc/CuPc) is also analyzed using this method. A small amount of band bending is measured in the outer CuPc layer. This method provides an independent reference method for determination of the band bending in an organic heterojunction that will complement photoemission spectroscopy and current-voltage measurement methods. Published by AIP Publishing.; National Natural Science Foundation of China [61376059, 61076057, 91421303, 91221202]; MOST of China [2012CB932701, 2013CB933604]; SCI(E); EI; ARTICLE; xingyj@pku.edu.cn; 24; 119
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/492117]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xing, Yingjie,Li, Shuai,Wang, Guiwei,et al. Field emission analysis of band bending in donor/acceptor heterojunction[J]. JOURNAL OF APPLIED PHYSICS,2016.
APA	Xing, Yingjie,Li, Shuai,Wang, Guiwei,Zhao, Tianjiao,&Zhang, Gengmin.(2016).Field emission analysis of band bending in donor/acceptor heterojunction.JOURNAL OF APPLIED PHYSICS.
MLA	Xing, Yingjie,et al."Field emission analysis of band bending in donor/acceptor heterojunction".JOURNAL OF APPLIED PHYSICS (2016).