Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale   Integrated Circuits

doi:10.1021/acs.nanolett.6b02046

CORC > 北京大学 > 信息科学技术学院

	Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits
	Chen, Bingyan ; Zhang, Panpan ; Ding, Li ; Han, Jie ; Qiu, Song ; Li, Qingwen ; Zhang, Zhiyong ; Peng, Lian-Mao
刊名	NANO LETTERS
	2016
关键词	Carbon nanotube medium scale integrated circuit field-effect transistor threshold voltage variation THIN-FILM TRANSISTORS ATOMIC LAYER DEPOSITION HIGH-PERFORMANCE ELECTRONICS NETWORKS VARIABILITY JUNCTION DEVICES DESIGN ARRAYS
DOI	10.1021/acs.nanolett.6b02046
英文摘要	Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.; National Key Research & Development Program [2016YFA0201901, 2016YFA0201902]; National Natural Science Foundation of China [61322105, 61321001, 61390504, 61427901]; Beijing Municipal Science and Technology Commission [D151100003315004, Z151100003315009]; SCI(E); EI; PubMed; ARTICLE; zyzhang@pku.edu.cn; lmpeng@pku.edu.cn; 8; 5120-5128; 16
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/491760]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, Bingyan,Zhang, Panpan,Ding, Li,et al. Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits[J]. NANO LETTERS,2016.
APA	Chen, Bingyan.,Zhang, Panpan.,Ding, Li.,Han, Jie.,Qiu, Song.,...&Peng, Lian-Mao.(2016).Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.NANO LETTERS.
MLA	Chen, Bingyan,et al."Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits".NANO LETTERS (2016).