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	A Novel Deep-Impurity-Level Assisted Tunneling Technology for Enhanced Interband Tunneling Probability; A Novel Deep-Impurity-Level Assisted Tunneling Technology for Enhanced Interband Tunneling Probability
	Run Dong Jia ; Qian Qian Huang ; Chun Lei Wu ; Yang Zhao ; Jia Xin Wang ; Ru Huang
	2016
关键词	tunneling impurity Probability facilitate junction boosting successively showing steps instead tunneling impurity Probability facilitate junction boosting successively showing steps instead
英文摘要	In this work, a novel deep-impurity-level assisted tunneling technology with enhanced band to band tunneling(BTBT) probability is proposed and experimentally demonstrated. Through implanting deep level impurities in the tunnel junction, continuous deep level states can be introduced to facilitate the BTBT process for significant BTBT probability boosting.Compared with conventional tunnel diodes, the fabricated deep-impurity-level assisted tunnel diodes exhibit 7.8x and 23 x current enhancement in P~(++)/N~+ and N~(++)/P~+ tunnel diodes respectively, showing its great potential for future current enhancement in tunnel FETs.; In this work, a novel deep-impurity-level assisted tunneling technology with enhanced band to band tunneling(BTBT) probability is proposed and experimentally demonstrated. Through implanting deep level impurities in the tunnel junction, continuous deep level states can be introduced to facilitate the BTBT process for significant BTBT probability boosting.Compared with conventional tunnel diodes, the fabricated deep-impurity-level assisted tunnel diodes exhibit 7.8x and 23 x current enhancement in P~(++)/N~; IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479814]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Run Dong Jia,Qian Qian Huang,Chun Lei Wu,et al. A Novel Deep-Impurity-Level Assisted Tunneling Technology for Enhanced Interband Tunneling Probability, A Novel Deep-Impurity-Level Assisted Tunneling Technology for Enhanced Interband Tunneling Probability. 2016-01-01.

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