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	Nanoscale Ge Fin Etching Using Inductively Coupled Plasma for Ge-based Multi-gate Devices; Nanoscale Ge Fin Etching Using Inductively Coupled Plasma for Ge-based Multi-gate Devices
	Bingxin Zhang ; Xia An ; Yuxuan Xia ; Ming Li ; Meng Lin ; Peilin Hao ; Xing Zhang ; Ru Huang
	2016
关键词	roughness etching fabrication uniformity inductively optimizing layout illustrated scaling removed roughness etching fabrication uniformity inductively optimizing layout illustrated scaling removed
英文摘要	In this paper, nanoscale germanium(Ge) fin etching with inductively coupled plasma(ICP) equipment by Cl_2/BCl_3/Ar gas is experimentally demonstrated. The impact of Cl_2/BCl_3/Ar gas ratio on etching induced Ge surface roughness, etch rate, sidewall steepness, uniformity and layout dependence are comprehensively investigated. The surface roughness is improved by increasing Ar flow rate. A nearly vertical Ge Fin is obtained by optimizing Cl_2/BCl_3/Ar gas ratio. By using silicon oxide as hard mask, 60nm-width Ge Fin array with height of 100 nm is experimentally illustrated with high uniformity of etch depth and Fin width. Therefore, this method shows great potential for Ge-based multi-gate device fabrication.; In this paper, nanoscale germanium(Ge) fin etching with inductively coupled plasma(ICP) equipment by Cl_2/BCl_3/Ar gas is experimentally demonstrated. The impact of Cl_2/BCl_3/Ar gas ratio on etching induced Ge surface roughness, etch rate, sidewall steepness, uniformity and layout dependence are comprehensively investigated. The surface roughness is improved by increasing Ar flow rate. A nearly vertical Ge Fin is obtained by optimizing Cl_2/BCl_3/Ar gas ratio. By using silicon oxide as hard mask, 60nm-wid; IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479786]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Bingxin Zhang,Xia An,Yuxuan Xia,et al. Nanoscale Ge Fin Etching Using Inductively Coupled Plasma for Ge-based Multi-gate Devices, Nanoscale Ge Fin Etching Using Inductively Coupled Plasma for Ge-based Multi-gate Devices. 2016-01-01.

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