QQ客服 官方微博 反馈留言

	GIDL Challenge of GAA SNWT For Low Power Application; GIDL Challenge of GAA SNWT For Low Power Application
	Ming Li ; Jiewen Fan ; Yuancheng Yang ; Gong Chen ; Ru Huang
	2016
关键词	drain transistor junction overcome suppressed extremely modulated leakage overlap TCAD drain transistor junction overcome suppressed extremely modulated leakage overlap TCAD
英文摘要	In this paper, the challenge of gate-all-around nanowire transistor for low power application is uncovered and discussed from experimental and TCAD simulation. For promising low power application, gate-all-around nanowire transistor faces more difficulties than expected due to abnormal gate-induced-drain-leakage current behavior. The study shows that as nanowire diameter shrinks, GIDL current will become worse rather than suppressed. The gate coupling modulated drain-to-body electric field is found responsible for the increased GIDL current in the extremely scaled nanowire. To overcome the challenge of GAA SNWT in low power application, a practical design is proposed by optimization of overlap length and drain junction gradient considering the trade-off between short channel effect and performance.; In this paper, the challenge of gate-all-around nanowire transistor for low power application is uncovered and discussed from experimental and TCAD simulation. For promising low power application, gate-all-around nanowire transistor faces more difficulties than expected due to abnormal gate-induced-drain-leakage current behavior. The study shows that as nanowire diameter shrinks, GIDL current will become worse rather than suppressed. The gate coupling modulated drain-to-body electric field is found respons; IEEE Beijing Section; 1
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479785]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ming Li,Jiewen Fan,Yuancheng Yang,et al. GIDL Challenge of GAA SNWT For Low Power Application, GIDL Challenge of GAA SNWT For Low Power Application. 2016-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。