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	Theoretical Investigation on Hydrogen-related Oxide Traps in HfO_2 Gate Dielectrics: An ab-initio Study; Theoretical Investigation on Hydrogen-related Oxide Traps in HfO_2 Gate Dielectrics: An ab-initio Study
	Yawen Zhang ; Peng Hao ; Runsheng Wang ; Jingwei Ji ; Ru Huang
	2016
关键词	defects charging Hydrogen barriers neighboring likely bounding Atomic interpolation annealing defects charging Hydrogen barriers neighboring likely bounding Atomic interpolation annealing
英文摘要	Density functional theory(DFT) calculations are performed to investigate the hydrogen-related oxygen vacancy defects in HfO_2gate dielectrics. The results demonstrate that the introduction of the hydrogen atom has less effect on micro-structure of the HfO_2 oxygen vacancy defects. And the new hydrogen-related defects have good thermal stability. The stability of different hydrogen-related structures, formation energy of new defects and their energy density of traps are studied.Furthermore, the energy-position relationship curves between neighboring charge states of defects are also demonstrated, for analyzing the charging/discharging transition energy barriers.; Density functional theory(DFT) calculations are performed to investigate the hydrogen-related oxygen vacancy defects in HfO_2gate dielectrics. The results demonstrate that the introduction of the hydrogen atom has less effect on micro-structure of the HfO_2 oxygen vacancy defects. And the new hydrogen-related defects have good thermal stability. The stability of different hydrogen-related structures, formation energy of new defects and their energy density of traps are studied.Furthermore, the energy-posit; IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479784]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yawen Zhang,Peng Hao,Runsheng Wang,et al. Theoretical Investigation on Hydrogen-related Oxide Traps in HfO_2 Gate Dielectrics: An ab-initio Study, Theoretical Investigation on Hydrogen-related Oxide Traps in HfO_2 Gate Dielectrics: An ab-initio Study. 2016-01-01.

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