QQ客服 官方微博 反馈留言

	Characteristic research of Zinc Oxide based thin film transistor by ALD technology; Characteristic research of Zinc Oxide based thin film transistor by ALD technology
	Yukun Yang ; Dedong Han ; Guodong Cui ; Wen Yu ; Huijin Li ; Junchen Dong ; Xing Zhang ; Yi Wang ; Shengdong Zhang
	2016
关键词	transistor Zinc saturation annealing swing prepare characters conductive photoelectric doping transistor Zinc saturation annealing swing prepare characters conductive photoelectric doping
英文摘要	Zinc oxide is a well-known wide band gap semiconductor material which can be applied to thin film transistors.Al-doped ZnO(AZO) has a better electrical conductivity than Zinc oxide at the same time with good photoelectric properties.In this paper,the method of atomic layer deposition(ALD) was used to prepare the ZnO and Al:ZnO(AZO) thin films as the active layers on silicon substrates at 100℃ TEM and SEM were used to compare the characters of these films.While,transfer characteristic was an important basis for measuring the electrical characteristics of the devices with different active layers before and after annealing.The unannealed three-layers AZO-based thin film transistor(TFT)exhibits saturation mobility(μ_(sat) of 5.97cm~2V~(-1)S~(-1),a lower subthreshold swing(SS) of 188mV/decade and a high I_(on)/I_(off) ratio of 1.47×10~8.; Zinc oxide is a well-known wide band gap semiconductor material which can be applied to thin film transistors.Al-doped ZnO(AZO) has a better electrical conductivity than Zinc oxide at the same time with good photoelectric properties.In this paper,the method of atomic layer deposition(ALD) was used to prepare the ZnO and Al:ZnO(AZO) thin films as the active layers on silicon substrates at 100℃ TEM and SEM were used to compare the characters of these films.While,transfer characteristic was an important basis; IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479781]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yukun Yang,Dedong Han,Guodong Cui,et al. Characteristic research of Zinc Oxide based thin film transistor by ALD technology, Characteristic research of Zinc Oxide based thin film transistor by ALD technology. 2016-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。