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	TaO_x Based Memristors with Recessed Bottom Electrodes and Built-in Ion Concentration Gradient as Electronic Synapses; TaO_x Based Memristors with Recessed Bottom Electrodes and Built-in Ion Concentration Gradient as Electronic Synapses
	Minghui Yin ; Yuchao Yang ; Zongwei Wang ; Teng Zhang ; Yichen Fang ; Xue Yang ; Yimao Cai ; Ru Huang
	2016
关键词	potentiation constantly resistive synaptic Bottom switching tolerant Neumann ascending plasticity potentiation constantly resistive synaptic Bottom switching tolerant Neumann ascending plasticity
英文摘要	Inspired by the computing architecture of human brain,neuromorphic computing promises massively parallel,energy efficient and fault tolerant computation compared with conventional von Neumann approaches. In order to achieve this ambitious goal, one of the crucial tasks is to make devices that can emulate the functions of biological synapses at the physical level. Here we fabricated a novel Pt/TaO_x/Ta memristor with recessed Ta bottom electrodes, where the Ta Ox film was formed by thermal oxidation of the bottom electrode and thus had a constantly ascending concentration of oxygen vacancies from the Pt/Ta Ox interface to the TaO_x/Ta interface. Such cell geometry and ion distribution profile gave rise to highly incremental and uniform resistive switching that emulated the potentiation or depression process of synapses. Furthermore, important synaptic learning rules,such as spike timing dependent plasticity, could also be implemented by these devices, making them well suited for electronic synapses in neuromor...; Inspired by the computing architecture of human brain,neuromorphic computing promises massively parallel,energy efficient and fault tolerant computation compared with conventional von Neumann approaches. In order to achieve this ambitious goal, one of the crucial tasks is to make devices that can emulate the functions of biological synapses at the physical level. Here we fabricated a novel Pt/TaO_x/Ta memristor with recessed Ta bottom electrodes, where the Ta Ox film was formed by thermal oxidation of the; IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479780]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Minghui Yin,Yuchao Yang,Zongwei Wang,et al. TaO_x Based Memristors with Recessed Bottom Electrodes and Built-in Ion Concentration Gradient as Electronic Synapses, TaO_x Based Memristors with Recessed Bottom Electrodes and Built-in Ion Concentration Gradient as Electronic Synapses. 2016-01-01.

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