On the Frequency Dependence of Oxide Trap Coupling in Nanoscale MOSFETs: Understanding based on Complete 4-State Trap Model; On the Frequency Dependence of Oxide Trap Coupling in Nanoscale MOSFETs: Understanding based on Complete 4-State Trap Model | |
Peng Hao ; Dongyuan Mao ; Runsheng Wang ; Shaofeng Guo ; Pengpeng Ren ; Ru Huang | |
2016 | |
关键词 | Trap explanation interpretation verified switching discharged thoroughly capture tendency metastable Trap explanation interpretation verified switching discharged thoroughly capture tendency metastable |
英文摘要 | The frequency dependence of oxide trap coupling effect in nanoscale MOSFETs under AC switching condition is discussed thoroughly, with experimental and theoretical studies. By using AC STR measurement, a decreased tendency of trap coupling strength with increased frequency is observed. Rather than conventional 2-state trap model, it is found that only the explanation based on complete 4-state trap model is a reasonable interpretation, verified by Monte-Carlo simulation. The impacts of trap coupling frequency characteristics on digital circuits are also evaluated, showing a frequency-dependent underestimation of transient circuit performance if ignoring the above effect.; The frequency dependence of oxide trap coupling effect in nanoscale MOSFETs under AC switching condition is discussed thoroughly, with experimental and theoretical studies. By using AC STR measurement, a decreased tendency of trap coupling strength with increased frequency is observed. Rather than conventional 2-state trap model, it is found that only the explanation based on complete 4-state trap model is a reasonable interpretation, verified by Monte-Carlo simulation. The impacts of trap coupling frequen; IEEE Beijing Section; 3 |
语种 | 英语 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/479774] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Peng Hao,Dongyuan Mao,Runsheng Wang,et al. On the Frequency Dependence of Oxide Trap Coupling in Nanoscale MOSFETs: Understanding based on Complete 4-State Trap Model, On the Frequency Dependence of Oxide Trap Coupling in Nanoscale MOSFETs: Understanding based on Complete 4-State Trap Model. 2016-01-01. |
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