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	Strain Effect on Electronic Structure of La-doped Monolayer Graphene; Strain Effect on Electronic Structure of La-doped Monolayer Graphene
	Xiaomi Zhang ; Dedong Han ; Yingying Cong ; Junchen Dong ; Guodong Cui ; Shengdong Zhang ; Xing Zhang ; Yi Wang
	2016
关键词	compressive uniaxial Strain tensile dimensions extremely monolayer figure sheet matches compressive uniaxial Strain tensile dimensions extremely monolayer figure sheet matches
英文摘要	As a basic block of carbon materials with different dimensions, graphene has shown great potential in novel device field. As a result, it becomes extremely important to break the zero-band-gap status of graphene sheet. In this work, the density functional theory(DFT) has been carried out to calculate the electronic structure of La-doped monolayer graphene under both X-direction uniaxial and Y-direction uniaxial strain. It turns out that both tensile uniaxial strain along the X-direction and compressive strain along the Y-direction help to broaden bandgap in La-doped graphene sheet. In addition, the La-doped graphene could get a biggest band gap while these two kinds of uniaxial strains are given to be 12% and-9%, respectively.; As a basic block of carbon materials with different dimensions, graphene has shown great potential in novel device field. As a result, it becomes extremely important to break the zero-band-gap status of graphene sheet. In this work, the density functional theory(DFT) has been carried out to calculate the electronic structure of La-doped monolayer graphene under both X-direction uniaxial and Y-direction uniaxial strain. It turns out that both tensile uniaxial strain along the X-direction and compressive str; IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479767]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xiaomi Zhang,Dedong Han,Yingying Cong,et al. Strain Effect on Electronic Structure of La-doped Monolayer Graphene, Strain Effect on Electronic Structure of La-doped Monolayer Graphene. 2016-01-01.

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