Effects of channel structure consisting of ZnO/Al2O3 multilayers on   thin-film transistors fabricated by atomic layer deposition

doi:10.7567/JJAP.56.04CG03

CORC > 北京大学 > 信息科学技术学院

	Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition
	Cui, Guodong ; Han, Dedong ; Dong, Junchen ; Cong, Yingying ; Zhang, Xiaomi ; Li, Huijin ; Yu, Wen ; Zhang, Shengdong ; Zhang, Xing ; Wang, Yi
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2017
关键词	ZINC-OXIDE ZNO
DOI	10.7567/JJAP.56.04CG03
英文摘要	By applying a novel active layer comprising ZnO/Al2O3 multilayers, we have successfully fabricated fully transparent high-performance thin-film transistors (TFTs) with a bottom gate structure by atomic layer deposition (ALD) at low temperature. The effects of various ZnO/Al2O3 multilayers were studied to improve the morphological and electrical properties of the devices. We found that the ZnO/Al2O3 multilayers have a significant impact on the performance of the TFTs, and that the TFTs with the ZnO/15-cycle Al2O3/ZnO structure exhibit superior performance with a low threshold voltage (VTH) of 0.9V, a high saturation mobility (mu(sat)) of 145 cm(2)V(-1)s(-1), a steep subthreshold swing (SS) of 162mV/decade, and a high I-on/I-off ratio of 3.15x10(8). The enhanced electrical properties were explained by the improved crystalline nature of the channel layer and the passivation effect of the Al2O3 layer. (C) 2017 The Japan Society of Applied Physics; National Basic Research Program of China (973 program) [2013CBA01604]; National Natural Science Foundation of China [61275025]; SCI(E); ARTICLE; 4; 56
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/474393]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Cui, Guodong,Han, Dedong,Dong, Junchen,et al. Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2017.
APA	Cui, Guodong.,Han, Dedong.,Dong, Junchen.,Cong, Yingying.,Zhang, Xiaomi.,...&Wang, Yi.(2017).Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition.JAPANESE JOURNAL OF APPLIED PHYSICS.
MLA	Cui, Guodong,et al."Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition".JAPANESE JOURNAL OF APPLIED PHYSICS (2017).