High-Performance Complementary Transistors and Medium-Scale Integrated   Circuits Based on Carbon Nanotube Thin Films

doi:10.1021/acsnano.7b00861

CORC > 北京大学 > 信息科学技术学院

	High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films
	Yang, Yingjun ; Ding, Li ; Han, Jie ; Zhang, Zhiyong ; Peng, Lian-Mao
刊名	ACS NANO
	2017
关键词	carbon nanotube complementary metal-oxide semiconductor field-effect transistors medium-scale integrated circuits network film FIELD-EFFECT TRANSISTORS DOPING-FREE FABRICATION LOGIC-CIRCUITS THRESHOLD VOLTAGE OXIDE ELECTRONICS NETWORKS UNIFORM
DOI	10.1021/acsnano.7b00861
英文摘要	Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 mu m. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.; National Key Research & Development Program [2016YFA0201901, 2016YFA0201902]; National Science Foundation of China [61376126, 61321001, 61427901]; Beijing Municipal Science and Technology Commission [D161100002616001-3]; SCI(E); ARTICLE; 4; 4124-4132; 11
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/474223]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yang, Yingjun,Ding, Li,Han, Jie,et al. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films[J]. ACS NANO,2017.
APA	Yang, Yingjun,Ding, Li,Han, Jie,Zhang, Zhiyong,&Peng, Lian-Mao.(2017).High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.ACS NANO.
MLA	Yang, Yingjun,et al."High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films".ACS NANO (2017).