Light-Tunable Nonvolatile Memory Characteristics in Photochromic RRAM

doi:10.1002/aelm.201600416

CORC > 北京大学 > 信息科学技术学院

	Light-Tunable Nonvolatile Memory Characteristics in Photochromic RRAM
	Ling, Haifeng ; Tan, Kangming ; Fang, Qiyun ; Xu, Xinshui ; Chen, Hao ; Li, Wenwen ; Liu, Yefan ; Wang, Laiyuan ; Yi, Mingdong ; Huang, Ru ; Qian, Yan ; Xie, Linghai ; Huang, Wei
刊名	ADVANCED ELECTRONIC MATERIALS
	2017
关键词	charge trapping filaments photochromic memory resistive switching RESISTIVE SWITCHING MEMORIES ELECTRICAL CARRIER-INJECTION ORGANIC MEMORY DIARYLETHENE MOLECULES MULTILEVEL STORAGE EMITTING-DIODES DEVICES TRANSISTOR ACCEPTOR DONOR
DOI	10.1002/aelm.201600416
英文摘要	Light-tunable resistive switching (RS) characteristics are demonstrated in a photochromophore (BMThCE)-based resistive random access memory. Triggered by nondestructive ultraviolet or visible light irradiation, two memory-type RS characteristics can be reversibly modulated in the same device upon a narrow range of applied voltage (<6 V), accompanied by the photochromophores in the active layer reversibly changed between ring-open state (namely, o-BMThCE) and ring-closed state (namely, c-BMThCE). The o-BMThCE-based memory exhibits a write-once-read-many characteristic with a high current on/off ratio of 10(5), while the c-BMThCE-based one shows a flash characteristic. Both of the RS characteristics present good nonvolatile stability with the resistance states maintained over 10(4) s without variation. This RS modulation is possibly related to the formation and rupture of conductive filaments, which formed along channels consisting of BMThCE trapping molecules. This work provides a new memory element for the design of light-controllable high density storage and data encryption technology.; 973 project [2014CB648300]; 863 project [2011AA050526]; National Natural Science Foundation of China [21373114, 21573111, 61475074]; Priority Academic Program Development of Jiangsu Higher Education Institutions [YX03001]; Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM); Synergetic Innovation Center for Organic Electronics and Information Displays; Minsitry of Education of China [IRT1148]; Excellent science and technology innovation team of Jiangsu Higher Education Institutions; Six Peak Talents Foundation of Jiangsu Province [XCL-CXTD-009]; Qing Lan Project; NUPT projects [1311]; SCI(E); ARTICLE; 8; 3
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/471762]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ling, Haifeng,Tan, Kangming,Fang, Qiyun,et al. Light-Tunable Nonvolatile Memory Characteristics in Photochromic RRAM[J]. ADVANCED ELECTRONIC MATERIALS,2017.
APA	Ling, Haifeng.,Tan, Kangming.,Fang, Qiyun.,Xu, Xinshui.,Chen, Hao.,...&Huang, Wei.(2017).Light-Tunable Nonvolatile Memory Characteristics in Photochromic RRAM.ADVANCED ELECTRONIC MATERIALS.
MLA	Ling, Haifeng,et al."Light-Tunable Nonvolatile Memory Characteristics in Photochromic RRAM".ADVANCED ELECTRONIC MATERIALS (2017).