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	New Insights into the Near-Threshold Design in Nanoscale FinFET Technology for Sub-0.2V Applications
	Jiang, Xiaobo ; Guo, Shaofeng ; Wang, Runsheng ; Wang, Yuan ; Wang, Xingsheng ; Cheng, Binjie ; Asenov, Asen ; Huang, Ru
	2016
英文摘要	Energy consumption has become the major concern of the IC industry. As a result, near-threshold-voltage (NTV) design has attracted a lot of attention for its superiority in energy efficiency. However, NTV design is faced with the key challenge variability, especially for FinFET technology where device electrical FoMs are found to be strongly correlated. In this paper, new methodology of NTV design optimization for FinFET is proposed for the first time, and demonstrated based on silicon data. Significant improvements are achieved in the following three aspects: (1) Our newly proposed predictive compact variability models in all-region are accurately calibrated with experimental data, using a simple characterization method; (2) A new efficient approach for logic design space optimization is proposed based on a set of elaborately selected subthreshold FoMs, and the impacts of variation on energy efficiency, delay variation and failure probability are thoroughly investigated; (3) The conventional gate sizing method is also ameliorated specifically for FinFET NTV design. Based on silicon data, the proposed methodology is then demonstrated under V-dd=199mV and V-dd=145mV, targeting energy-efficiency priority and V-dd priority scenarios, respectively. This work provides helpful guidelines for FinFET variation-aware near-threshold design.; NSFC [61522402, 61421005]; 863 Project [2015AA016501]; CPCI-S(ISTP)
语种	英语
出处	62nd Annual IEEE International Electron Devices Meeting (IEDM)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/470258]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Jiang, Xiaobo,Guo, Shaofeng,Wang, Runsheng,et al. New Insights into the Near-Threshold Design in Nanoscale FinFET Technology for Sub-0.2V Applications. 2016-01-01.

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