QQ客服 官方微博 反馈留言

	Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology
	Gao, B. ; Zhang, H.W. ; Yu, S. ; Sun, B. ; Liu, L.F. ; Liu, X.Y. ; Wang, Y. ; Han, R.Q. ; Kang, J.F. ; Yu, B. ; Wang, Y.Y.
	2009
英文摘要	For the first time, a new technical solution is presented to essentially improve the uniformity of oxide based RRAM devices by using material design methodology based on first principle calculations. The results indicate that doping of trivalent elements such as Al, La, or Ga into the tetravalent metal oxides such as HfO2 or ZrO2 effectively controls the formation of oxygen vacancy filaments along the doping sites, which helps improving the resistive switching (RS) behaviors in oxide based RRAM devices. The improved uniformity of forming and set/reset behaviors in the Al-doped HfO2 RRAM devices was demonstrated by both experiments and theoretical calculations, proving the validity of the proposed method.; EI; 30-31
语种	英语
出处	2009 Symposium on VLSI Technology, VLSIT 2009
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/461561]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Gao, B.,Zhang, H.W.,Yu, S.,et al. Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology. 2009-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。