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	Atomic Monte-Carlo Simulation for CBRAM with Various Filament Geometries
	Zhao, Y. D. ; Huang, P. ; Guo, Z. H. ; Lun, Z. Y. ; Gao, B. ; Liu, X. Y. ; Kang, J. F.
	2016
关键词	RRAM resistive switching conductive filament conductive bridge Monte-Carlo simulation OXIDE MEMORY
英文摘要	An atomic Monte-Carlo simulator of Conductive Bridge Random Access Memory (CBRAM) is developed to investigate the microscopic properties of filament growth and dissolution during Forming/SET and RESET processes. The cluster growth during nucleation correlated with electrochemical reactions and cations transportation are included. The impacts of the critical material parameters on the geometry of conductive filaments (CF) are clarified by the simulator. The conical and dendrite shape CF experimentally observed by different groups are simulated by tuning the critical material parameters. Using the simulator, the microscopic properties of Forming/SET and RESET processes with different CF geometries are investigated and the retention behaviors can be analyzed.; CPCI-S(ISTP); phwang@pku.edu.cn; kangjf@pku.edu.cn; 153-156
语种	英语
出处	International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/460155]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhao, Y. D.,Huang, P.,Guo, Z. H.,et al. Atomic Monte-Carlo Simulation for CBRAM with Various Filament Geometries. 2016-01-01.

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