QQ客服 官方微博 反馈留言

	Parametric Study of DRIE Process for Enhancing the Profile-preserving Property of Square Through Silicon Via
	Guan, Yong ; Zeng, Qinghua ; Chen, Jing ; Ma, Shenglin ; Meng, Wei ; Jin, Yufeng
	2016
关键词	through silicon via 3D packaging DRJE
英文摘要	TSV has emerged as a promising technique for three dimensional packaging. Square TSV is employed for some special type SRAM and DRAM memories, which are usually fabricated at individual advanced IC foundries. The profile-preserving property are usually very important and there is close relationship between the related process condition and the profile-preserving property. In this paper, parametric study of related deep reactive ion etching process for square TSV are conducted, and high density square TSV with 10000 pins per square centimeter is fabricated employed the optimized process.; CPCI-S(ISTP); j.chen@pku.edu.cn; 555-557
语种	英语
出处	17th International Conference on Electronic Packaging Technology (ICEPT)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/459911]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Guan, Yong,Zeng, Qinghua,Chen, Jing,et al. Parametric Study of DRIE Process for Enhancing the Profile-preserving Property of Square Through Silicon Via. 2016-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。