| Bias-dependent High Frequency Characterization of Through-Silicon Via (TSV) for 3D Integration | |
| Sun, Xin ; Fang, Runiu ; Liu, Huan ; Miao, Min ; Jin, Yufeng | |
| 2016 | |
| 关键词 | Through-silicon via (TSV) S parameter RLGC extraction MOS effect CAPACITANCE VIAS |
| 英文摘要 | In this paper, high frequency measurement of TSV structures under different DC bias conditions are carried out. The impact of the MOS capacitance effect of TSV on its transmission performance is analyzed. Capacitance and conductance parameters of TSV are extracted and compared with numerical calculations.; CPCI-S(ISTP); sunxin@ime.pku.edu.cn; runiu_fang@163.com |
| 语种 | 英语 |
| 出处 | IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) |
| 内容类型 | 其他 |
| 源URL | [http://ir.pku.edu.cn/handle/20.500.11897/459897]  |
| 专题 | 信息科学技术学院 |
| 推荐引用方式 GB/T 7714 | Sun, Xin,Fang, Runiu,Liu, Huan,et al. Bias-dependent High Frequency Characterization of Through-Silicon Via (TSV) for 3D Integration. 2016-01-01. |
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