Controlled growth of large-area anisotropic ReS2 atomic layer and its   photodetector application

doi:10.1039/c6nr07233j

CORC > 北京大学 > 信息科学技术学院

	Controlled growth of large-area anisotropic ReS2 atomic layer and its photodetector application
	Li, Xiaobo ; Cui, Fangfang ; Feng, Qingliang ; Wang, Gang ; Xu, Xiaosa ; Wu, Juanxia ; Mao, Nannan ; Liang, Xing ; Zhang, Zhongyue ; Zhang, Jin ; Xu, Hua
刊名	NANOSCALE
	2016
关键词	CHEMICAL-VAPOR-DEPOSITION FIELD-EFFECT TRANSISTORS RHENIUM DISULFIDE RES2 FEW-LAYER RAMAN-SPECTROSCOPY INPLANE ANISOTROPY HIGH RESPONSIVITY BLACK PHOSPHORUS MONOLAYER SEMICONDUCTOR
DOI	10.1039/c6nr07233j
英文摘要	As an anisotropic 2D layered material, rhenium disulfide (ReS2) has attracted much attention because of its unusual properties and promising applications in electronic and optoelectronic devices. However, the low lattice symmetry and interlayer decoupling of ReS2 make asymmetric growth and out-of-plane growth occur quite easily; therefore, thick flake, dendritic and flower-like structures of ReS2 have mostly been obtained previously. Here, we report on an approach based on space-confined epitaxial growth for the controlled synthesis of ReS2 films. Using this approach, large-area and high-quality ReS2 films with uniform monolayer thickness can grow on a mica substrate. Furthermore, the weak van der Waals interaction between the surface of mica and ReS2 clusters, which favors surface-confined growth while avoiding out-of-plane growth, is critical for growing ReS2 with uniform monolayer thickness. The morphological evolution of ReS2 with the growth temperature reveals that asymmetric growth can be suppressed at relatively low temperatures. A ReS2 field-effect transistor displayed a current on/off ratio of 1(0)6 and an electron mobility of up to 40 cm(2) V-1 s(-1), with outstanding photoresponsivity of 12 A W-1. This work not only promotes the large-scale employment of ReS2 in high-performance optoelectronic devices, but also provides a means of controlling the unusual growth behavior of low-lattice-symmetry 2D layered materials.; National Natural Science Foundation of China [51502167]; Fundamental Research Funds for the Central Universities [GK201502003]; SCI(E); PubMed; ARTICLE; xuhua-nano@snnu.edu.cn; 45; 18956-18962; 8
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/457154]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Xiaobo,Cui, Fangfang,Feng, Qingliang,et al. Controlled growth of large-area anisotropic ReS2 atomic layer and its photodetector application[J]. NANOSCALE,2016.
APA	Li, Xiaobo.,Cui, Fangfang.,Feng, Qingliang.,Wang, Gang.,Xu, Xiaosa.,...&Xu, Hua.(2016).Controlled growth of large-area anisotropic ReS2 atomic layer and its photodetector application.NANOSCALE.
MLA	Li, Xiaobo,et al."Controlled growth of large-area anisotropic ReS2 atomic layer and its photodetector application".NANOSCALE (2016).