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	Electrical Characteristics of Ultrathin InAs Nanowires; Electrical Characteristics of Ultrathin InAs Nanowires
	Mengqi Fu ; Tuanwei Shi ; Dong Pan ; Jianhua Zhao ; Qing Chen
	2015
关键词	ultrathin InAs nanowires Ion/Ioff ratio quantum confinements effects mobility contact resistance ultrathin InAs nanowires Ion/Ioff ratio quantum confinements effects mobility contact resistance
英文摘要	In As nanowires(NWs) are competitive candidates for high performance n-type devices owing to their high electron mobility, injection velocity and cylindrical geometry. However, their applications on integrated circuits are hindered by the difficulty of switch off because of the narrow bandgap of In ...; In As nanowires(NWs) are competitive candidates for high performance n-type devices owing to their high electron mobility, injection velocity and cylindrical geometry. However, their applications on integrated circuits are hindered by the difficulty of switch off because of the narrow bandgap of In ...; 国家纳米科学中心; 2
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/451753]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Mengqi Fu,Tuanwei Shi,Dong Pan,et al. Electrical Characteristics of Ultrathin InAs Nanowires, Electrical Characteristics of Ultrathin InAs Nanowires. 2015-01-01.

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