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	Understanding the Underlying Physics of Superior Endurance in Bi-layered TaOx-RRAM
	Zhao, Y. D. ; Huang, P. ; Chen, Z. ; Liu, C. ; Li, H. T. ; Ma, W. J. ; Gao, B. ; Liu, X. Y. ; Kang, J. F.
	2015
英文摘要	A comprehensive physical model is introduced to account for the superior endurance characteristics of TaOx-based RRAM with bi-layered Ta2O5-x/TaO2-x stack by considering the influence of oxygen content in TaO2-x layer. In the physical model, the TaO2-x layer acts as an oxygen reservoir to store and release oxygen ions (O2-) during switching cycles and different oxygen contents in TaO2-x layer correspond to different capabilities to take redox reactions with O2-. The proposed model is implemented into an atomic Monte-Carlo simulator involving the evolution of oxygen distribution in Ta2O5-x/TaO2-x stack to reproduce the impacts of different TaO2-x layers on endurance performance. Results reveal that the optimized TaO2-x layer with the feature of easily storing O2- as lattice oxygen (LO) during SET and decomposing to release O2- during RESET is beneficial to enhance the endurance property.; CPCI-S(ISTP); kangjf@pku.edu.cn
语种	英语
出处	Silicon Nanoelectronics Workshop
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450346]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhao, Y. D.,Huang, P.,Chen, Z.,et al. Understanding the Underlying Physics of Superior Endurance in Bi-layered TaOx-RRAM. 2015-01-01.

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