QQ客服 官方微博 反馈留言

	Simulation of TaOX-RRAM with Ta2O5-X/TaO2-X Stack Engineering
	Zhao, Y. D. ; Huang, P. ; Chen, Z. ; Liu, C. ; Li, H. T. ; Ma, W. J. ; Gao, B. ; Liu, X. Y. ; Kang, J. F.
	2015
关键词	RRAM resistive switching conductive filament TaOX Monte-Carlo simulation
英文摘要	An atomistic Monte-Carlo simulator of TaOX-based resistive random access memory (RRAM) with bi-layered Ta2O5-X/TaO2-X stack is developed by considering generation/recombination (G-R) of oxygen vacancies (V-O) with oxygen ions (O2-), phase transition (P-T) between Ta2O5 and TaO2 as well as interactions of Ta2O5-X/TaO2-X stack. The stack induced effects involving changeable Schottky barrier (SB) at the stack interface, the evolutions of O2- and lattice oxygen (LO) in the stack and the self-compliance effect are also included in the simulator. Using the simulation tool, the resistive switching (RS) characteristics of the bi-layered TaOX-based RRAM can be reproduced. The impacts of different stack thicknesses, oxygen contents and capabilities to take redox reactions with O2- of TaO2-X layer on RS behaviors are simulated. The simulation results can be utilized to achieve controllable switching processes and optimized device performances.; CPCI-S(ISTP); kangjf@pku.edu.cn; 285-288
语种	英语
出处	International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450254]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhao, Y. D.,Huang, P.,Chen, Z.,et al. Simulation of TaOX-RRAM with Ta2O5-X/TaO2-X Stack Engineering. 2015-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。