Reliability variability simulation methodology for IC design: an EDA perspective | |
Zhang, Aixi ; Huang, Chunyi ; Guo, Tianlei ; Chen, Alvin ; Guo, Shaofeng ; Wang, Runsheng ; Huang, Ru ; Xie, Jushan | |
2015 | |
英文摘要 | The reliability variation simulation methodology for advanced integrated circuit (IC) design is presented from an Electronic Design Automation (EDA) perspective. Reliability effects, such as hot carrier injection (HCI) and bias temperature instability (BTI), continue to be one of major concerns when devices scale down to smaller sizes. Reliability variability, considering process variation (PV) and aging variation (AV), is becoming critical for circuit reliability and yield. In this paper, we present and compare various reliability variability methodologies that incorporate process and aging variations for circuit simulation. Additionally, the correlation between PV and AV is analyzed. Finally, two representative circuits (ring oscillator and SRAM) are demonstrated with the reliability variation-aware simulation.; CPCI-S(ISTP); jushan@cadence.com |
语种 | 英语 |
出处 | IEEE International Electron Devices Meeting (IEDM) |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/450248] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Zhang, Aixi,Huang, Chunyi,Guo, Tianlei,et al. Reliability variability simulation methodology for IC design: an EDA perspective. 2015-01-01. |
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