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	Discussion and Analysis of Au/a-Si Contact Resistance in MEMS/NEMS Devices
	Fu, Fengshan ; Yang, Fang ; Wang, Wei ; Huang, Xian ; He, Jun ; Zhang, Li ; Guan, Taotao ; Li, Rui ; Zhang, Dacheng
	2015
关键词	anodic bonding contact resistance bonded vertical Kelvin method WAFER
英文摘要	In this work, reliable electric interconnection for MEMS/NEMS devices was realized by Au/a-Si (amorphous Si) and Au/c-Si (single-crystal Si) eutectic reaction in anodic wafer bonding process. We measured different resistances of different bonding areas under different bonding temperature. When bonding temperature is under 370 degrees C, the resistance of the different areas (from 200 mu m(2) to 1000 mu m(2)) fluctuate within a narrow range and more than 80 % of the resistance is less than 10 ohm. Compared with Au/c-Si contact, Au/a-Si contact is more reliable. When bonding temperature is above 370 degrees C, the resistance is related to the contact area and the discrete nature of the resistance is relatively large. According to statistics, more than 50 % of the resistance is above 100 ohm.; CPCI-S(ISTP); dchzhang@ime.pku.edu.cn; 593-596
语种	英语
出处	IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450214]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Fu, Fengshan,Yang, Fang,Wang, Wei,et al. Discussion and Analysis of Au/a-Si Contact Resistance in MEMS/NEMS Devices. 2015-01-01.

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