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	FABRICATION OF 1.5MM THICKNESS SILICON PIN FAST NEUTRON DETECTOR WITH GUARD RING STRUCTURE
	Zhang, Zhao ; Yu, Min ; Zhu, Zhiyuan ; Wang, Hao ; Huang, Yahuan ; Jin, Yufeng
	2016
关键词	DOSIMETRY DIODE
英文摘要	A novel silicon PIN diode with guard ring structure on top of the device for fast neutron dose measurement is presented. The device is designed to include p+ and n+ square contacts on each side of the high resistivity silicon, and a p+ ring surrounding the square p+ region on front side of the device. The sensitivity of the PIN diodes to Am-Be isotropic fast neutron radiation source, whose energy is 4.2MeV, is measured. The experimental results show that the diodes with guard ring achieve 15% higher sensitivity when forward biased.; CPCI-S(ISTP); yum@pku.edu.cn
语种	英语
出处	China Semiconductor Technology International Conference (CSTIC)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450105]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Zhao,Yu, Min,Zhu, Zhiyuan,et al. FABRICATION OF 1.5MM THICKNESS SILICON PIN FAST NEUTRON DETECTOR WITH GUARD RING STRUCTURE. 2016-01-01.

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