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	CHARACTERIZATION OF REFRACTORY METAL NITRIDE SCHOTTKY CONTACTS ON GaAs; CHARACTERIZATION OF REFRACTORY METAL NITRIDE SCHOTTKY CONTACTS ON GaAs
	ZHANG Lichun
	1989
关键词	Schottky aligned annealing contacts breakdown MESFET nitride annealed maintain Refractory Schottky aligned annealing contacts breakdown MESFET nitride annealed maintain Refractory
英文摘要	Thermally stable Schottky contacts are an important subject of research for self-aligned GaAs metal- semiconductor field-effect transistors.The self-aligned processing will require the gate material to maintain a good Schottky contact with GaAs substrate when subjected to high-temperature anneali...; Thermally stable Schottky contacts are an important subject of research for self-aligned GaAs metal- semiconductor field-effect transistors.The self-aligned processing will require the gate material to maintain a good Schottky contact with GaAs substrate when subjected to high-temperature anneali...; Chinese Institute of Electronics(CIE)、IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/444035]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	ZHANG Lichun. CHARACTERIZATION OF REFRACTORY METAL NITRIDE SCHOTTKY CONTACTS ON GaAs, CHARACTERIZATION OF REFRACTORY METAL NITRIDE SCHOTTKY CONTACTS ON GaAs. 1989-01-01.

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